Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material

ABSTRACT

A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a catalyst material is discloes. One step of the method includes polishing a first side of the wafer in order to remove material from the wafer. Another step of the method includes determining that a catalytic reaction has occurred due to the polishing step removing the catalyst material of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the catalytic reaction has occurred. A polishing system is also disclosed which detects a polishing endpoint based upon a catalytic reaction triggered by a catalyst material of a polishing endpoint layer of a semiconductor device.

BACKGROUND OF THE INVENTION

The present invention relates generally to an endpoint detection methodand apparatus, and more particularly to method and apparatus that polisha semiconductor wafer down to a polishing endpoint layer that containscatalyst material.

Semiconductor integrated circuits are typically fabricated by a layeringprocess in which several layers of material are fabricated (i) on or ina surface of a wafer, or (ii) on a surface of a previous layer. Thisfabrication process very often requires layers to be fabricated upon asmooth, planar surface of a previous layer. However, the surfacetopography of layers may be highly uneven due to (i) areas which arehigher than the remainder of the surface or (ii) an uneven topography ofan underlying layer. As a result, a layer may need to be polished so asto present a smooth planar surface for the next processing step, such asformation of a conductor layer or pattern on the surface of anotherlayer.

In general, a semiconductor wafer may be polished to remove hightopography and surface defects such as crystal lattice damage,scratches, roughness, or embedded particles of dirt or dust. Thepolishing process typically is accomplished with a polishing system thatincludes top and bottom platens (e.g. a polishing table and a wafercarrier or holder), between which the semiconductor wafer is positioned.The platens are moved relative to each other thereby causing material tobe removed from the surface of the wafer. This polishing process isoften referred to as mechanical planarization (MP) and is utilized toimprove the quality and reliability of semiconductor devices. Thepolishing process may also involve the introduction of a chemical slurryto facilitate (i) higher removal rates, and (ii) selective removal ofmaterials fabricated upon the semiconductor wafer. This polishingprocess is often referred to as chemical mechanical planarization orchemical mechanical polishing (CMP).

In these polishing processes, it is often important to determine anendpoint of the polishing process. Overpolishing (removing too much) ofa conductive layer results in increased circuit resistance and potentialscrapping of the semiconductor wafer. Since many processing steps haveoccurred prior to the polishing process, scrapping a semiconductor waferduring fabrication may result in a significant financial loss.Underpolishing (removing too little) of a conductive layer on the otherhand leads to failure in isolating circuits and results in electricalshorts, which leads to rework (redoing the CMP process) which raises thecost of production. Thus, a precise endpoint detection technique isneeded.

A typical method employed for determining endpoint in polishing systemsis to measure the amount of time needed to planarize a first wafer, andthen to run the remaining wafers for similar times. In practice thismethod is extremely time consuming, since operators must inspect eachwafer after polishing. This is because it is extremely difficult toprecisely control the removal rate of material since the removal ratemay vary during the polishing of an individual wafer or because theremoval rate may diminish in the process of polishing a number of wafersin sequence.

Another method employed for determining endpoint in polishing systems isto (i) form a polishing endpoint layer in the semiconductor device, and(ii) polish the semiconductor device down to the polishing endpointlayer. To this end, polishing systems detect when the polishing processreaches the polishing endpoint layer and terminate the polishing processin response to reaching the polishing endpoint layer. Various techniqueshave been used to detect when the polishing process reaches thepolishing endpoint layer. For example, U.S. Pat. No. 5,668,063 to Fry etal polishes a semiconductor device down to a tracer layer of detectablematerial. The polishing system of Fry determines that the tracer layerhas been reached when a chemical element detector detects materials suchas boron or phosphorous of the tracer layer have been removed by thepolishing process.

In order to base endpoint detection upon detecting material of thetracer layer, the chemical element detector needs to accurately detectrather small amounts of the tracer layer material, or the polishingsystem needs to remove more of the tracer layer material in order toprovide the chemical element detector with enough material for accuratedetection. The above is also true if the material of the tracer layer isconsumed as a reagent of a chemical reaction to be detected by thedetector. In this case, the detector would need to be able to detect theeffect of a small reaction, or the polishing system would need to removemore of the tracer layer in order to provide enough tracer material fora substantial reaction to occur.

Detectors capable of detecting small amounts of the tracer layer ordetecting the effect of a small chemical reaction are more expensivethan detectors capable of detecting larger amounts of the tracer layeror detecting the effect of a larger chemical reaction. Furthermore, theadditional removal of the tracer layer in order to provide more tracerlayer material for detection increases the risk of overpolishingespecially when the topography of the tracer layer is highly uneven.

Thus, a continuing need exists for a method and an apparatus whichaccurately and efficiently detects when a polishing system polishes asemiconductor device down to a polishing endpoint layer.

SUMMARY OF THE INVENTION

In accordance with one embodiment of the present invention, there isprovided a method of planarizing a semiconductor wafer having apolishing endpoint layer that includes a catalyst material. One step ofthe method includes polishing a first side of the wafer in order toremove material from the wafer. Another step of the method includesdetermining that a catalytic reaction has occurred due to the polishingstep removing the catalyst material of the polishing endpoint layer. Themethod also includes the step of terminating the polishing step inresponse to determining that the catalytic reaction has occurred.

Pursuant to another embodiment of the present invention, there isprovided a method of planarizing a semiconductor wafer down to apredetermined distance from a semiconductor substrate of the wafer. Onestep of the method includes forming in the wafer a catalyst materialthat is at the predetermined distance from the substrate of the wafer.Another step of the method includes polishing a first side of the waferin order to remove material from the wafer. The method also includes thestep of determining that a catalytic reaction has occurred due to thepolishing step removing a portion of the catalyst material from thewafer. Moreover, the method includes the step of terminating thepolishing step in response to determining that the catalytic reactionhas occurred.

Pursuant to yet another embodiment of the present invention, there isprovided an apparatus for polishing a semiconductor wafer down to acatalyst material of the wafer. The apparatus includes a polishingplaten having a polishing surface, a wafer carrier, a slurry supplysystem, and a polishing endpoint detector. The wafer carrier isconfigured to (i) engage the wafer by the second side of the wafer and(ii) press the first side of the wafer against the polishing surface ofthe polishing platen. The slurry supply system is configured to apply achemical slurry to the first side of the wafer which (i) facilitiesremoval of material from the wafer, and (ii) receives the materialremoved from the wafer carrier. The polishing platen and the wafercarrier are configured to rub the first side of the wafer against thepolishing surface in the presence of the chemical slurry in order toremove the material from the wafer. The polishing endpoint detector isoperable to (i) detect based upon the chemical slurry whether acatalytic reaction has occurred due to the polishing platen removing aportion of the catalyst material from the wafer. Moreover, the polishingendpoint detector is operable to cause the polishing of the wafer toterminate in response to detecting the catalytic reaction.

It is an object of the present invention to provide an improved methodand apparatus for determining an endpoint of a polishing process.

It is an object of the present invention to provide a new and usefulmethod and apparatus for determining an endpoint of a polishing process.

It is also an object of the present invention to provide a method andapparatus which accurately and efficiently detect when a polishingsystem polishes a semiconductor device down to a polishing endpointlayer.

It is a further object of the present invention to provide a method andapparatus for determining that a polishing system has polished a devicedown to a polishing endpoint without removing the device from thepolishing system.

It is yet another object of the present invention to provide a methodand apparatus which generate a relatively large chemical reaction ascompared to the amount of material removed from a polishing endpointlayer.

The above and other objects, features, and advantages of the presentinvention will become apparent from the following description and theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, 1C, 1D, 1E, and 1F show sectional views of a semiconductorwafer during various steps of a fabrication process;

FIG. 2 shows an embodiment of a polishing system which incorporatesvarious features of the present invention therein; and

FIG. 3 shows a flowchart of a polishing procedure used by the polishingsystem of FIG. 2.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT

While the invention is susceptible to various modifications andalternative forms, a specific embodiment thereof has been shown by wayof example in the drawings and will herein be described in detail. Itshould be understood, however, that there is no intent to limit theinvention to the particular form disclosed, but on the contrary, theintention is to cover all modifications, equivalents, and alternativesfalling within the spirit and scope of the invention as defined by theappended claims.

As stated above, a semiconductor wafer after various steps of afabrication process needs to be planarized in order to remove roughtopography from the surface of the semiconductor wafer. FIGS. 1A, 1B,1C, 1D, 1E, and 1F illustrate sectional views of a semiconductor wafer100 after various steps of a fabrication process of the presentinvention. In particular, FIGS. 1A, 1B, 1C, 1D, 1E, and 1F illustrateplanarization of a semiconductor 100 down to a polishing endpoint layer118.

FIG. 1A shows the semiconductor wafer 100 after a number of fabricationsteps. As shown, the semiconductor wafer 100 includes a semiconductorsubstrate 102 upon which a fabrication process formed a first insulatinglayer 104 and a first metal layer 106. In particular, the fabricationprocess formed the first insulating layer 104 upon the semiconductorsubstrate 102, and a contact hole 108 in the first insulating layer 104at a location above a transistor portion (not shown) of thesemiconductor substrate 102. Moreover, the fabrication process patternedthe first metal layer 106 (e.g. aluminum) over the first insulatinglayer 104 and the contact hole 108. As a result, the first metal layer106 fills the contact hole 108 forming an electrical contact with thetransistor portion of the semiconductor substrate 102. Moreover, thefilling of the contact hole 108 forms a pit 110 in the portion of thefirst metal layer 106 lying above the contact hole 108.

The semiconductor wafer 100 is shown in FIG. 1B after the fabricationprocess formed a second insulating layer 112 upon the surface of thesemiconductor wafer 100. As shown in FIG. 1B, the second insulatinglayer 112 has a highly uneven surface topography. The uneven surfacetopography of the second insulating layer 112 would cause accuracyproblems in fabricating additional layers of the semiconductor wafer100. For example, the uneven surface topography would cause controlproblems for a lithography process used to pattern a second metal layer120 (FIG. 1F) upon the second insulating layer 112. In order to avoidthe accuracy problems associated with the uneven topography of thesecond insulating layer 112, a polishing system such as the polishingsystem 210 of FIG. 2 polishes the second insulating layer 112 down to afirst level 116, thus planarizing the surface of the second insulatinglayer 112.

In order to enable the polishing system 210 of FIG. 2 to accuratelydetermine when the first level 116 is reached, the fabrication processimplants a polishing endpoint layer 118 into the second insulating layer112. As will be discussed in more detail below, the polishing endpointlayer 118 in the present invention includes a catalyst material whichthe polishing system 210 uses in determining a polishing endpoint. Asshown in FIG. 1C, the implanted polishing endpoint layer 118 starts atthe first level 116 and ends at a second level 120 that lies above thefirst metal layer 106. Methods of ion implanting material into asemiconductor wafer are well known in the art. Accordingly, ionimplantation techniques are not described herein.

However, it should be appreciated by those skilled in the art, thatimplantation techniques distribute the implanted material at variousdepths from the surface of implantation with a peak distributionoccurring at the desired depth. Accordingly, implantation techniquesimplant some material at a depth greater than the desired depth andimplant some material at a depth less than the desired depth. Sinceimplantation of the material into underlying layers may result inreliability problems, the implantation technique should ensure that theunderlying layers such as the first metal layer 106 are not contaminatedwith the implanted material. Furthermore, since the polishing system 210utilizes the implanted material of the polishing endpoint layer 118 todetermine the polishing endpoint, the implantation technique shouldimplant the material of the polishing endpoint layer 118 such that thepolishing endpoint layer 118 starts below a second level 122 thatcorresponds to the lowest part of the surface to be planarized.

The implantation technique also tends to create a non-planar polishingendpoint layer 118 due to the uneven surface topography of the secondinsulating layer 112. Since the implantation technique implants thematerial of the polishing endpoint layer 118 through the surface of thesecond insulating layer 112, the implanted polishing endpoint layer 118generally follows the topography of the second insulating layer 112. Asa result, the implantation technique needs to account for the uneventopography of the second insulating layer 112 when determining thedesired depth of the implanted polishing endpoint layer 118. In somecases it may be desirable to polish the surface of the semiconductorwafer 100 prior to implanting the polishing endpoint layer 118 in orderto lessen variations in the surface topography of the second insulatinglayer 112. Polishing the second insulating layer 112 prior to implantingthe polishing endpoint layer 118 generally generates a more planarpolishing endpoint layer 118, thus making it easier to implant apolishing endpoint layer 118 which is (i) deep enough to cause thepolishing system 210 to planarize the semiconductor wafer 100, and (ii)not deep enough to cause the implantation technique to contaminateunderlying layers with implanted material.

FIG. 1D shows the semiconductor wafer 100 after the polishing system 210has polished the semiconductor wafer 100 down to the polishing endpointlayer 118. As depicted, the semiconductor wafer 100 has a planar surfaceupon which additional layers may be fabricated. For example, thefabrication process may etch a via 126 through the second insulatinglayer 112 and the polishing endpoint layer 118 (FIG. 1E). Then, thefabrication process may pattern a second metal layer 120 upon the secondinsulating layer 112 and the polishing endpoint layer 118 as shown inFIG. 1F. It should be appreciated that depending upon (i) the nature ofthe additional layer that the fabrication process is to form upon theplanarized surface of the semiconductor wafer 100 and (ii) the materialof the implanted polishing endpoint layer 118, the fabrication processmay need to form a third insulating layer upon the planarized surfaceprior to forming the additional layer in order to insulate theadditional layer from the polishing endpoint layer 118.

Referring now to FIG. 2, there is shown a preferred embodiment of apolishing system 210 which planarizes a front side or surface of asemiconductor wafer or device. To this end, the polishing system 210includes a platen motor or other drive mechanism 218 and platensubassembly 220. The platen motor 218 rotates the platen subassembly 220about a center axis 222 at a platen velocity V_(P). The platen motor 218may rotate the platen subassembly 220 in a clockwise direction as shownby arrow 224 or in the counterclockwise direction.

The platen subassembly 220 includes a polishing platen 226 and polishingpad 228 mounted upon the polishing platen 226. Both the polishing platen226 and the polishing pad 228 are preferably circular and define apolishing surface against which the polishing system 210 may polish thesemiconductor wafer 100. Moreover, the polishing pad 228 is typicallymade of blown polyurethane which protects the polishing platen 226 fromchemical slurry and other chemicals introduced during the polishingprocess.

The polishing system 210 also includes a polishing head subassembly 230.The polishing head subassembly 230 includes a wafer carrier 232, acooling mechanism 233, a carrier motor or other drive mechanism 234, anda wafer carrier displacement mechanism 236. The wafer carrier 232applies a controlled adjustable downward force F (as illustrated byarrow 238) to press semiconductor wafer 100 into polishing pad 228 tofacilitate polishing of the front side of the semiconductor wafer 100.The carrier motor 234 rotates wafer carrier 232 and semiconductor wafer100 about a center axis 237 at a wafer velocity V_(W). The carrier wafermay rotate the wafer carrier 232 in a clockwise direction as shown byarrow 235 or in the counterclockwise direction. However, the carriermotor 234 preferably rotates the wafer carrier 232 in the samerotational direction as platen motor 218 rotates the platen subassembly220 (although the carrier motor 234 may rotate the semiconductor wafer100 in the rotational direction opposite the rotational direction of theplaten subassembly 220 as desired).

The wafer carrier 232 also includes mechanisms (not shown) for holdingthe semiconductor wafer 100. For example, the wafer carrier 232 mayinclude a vacuum-type mechanism which generates a vacuum force thatdraws the semiconductor wafer 100 against the wafer carrier 232. Oncethe semiconductor wafer 100 is positioned on the wafer carrier 232 andheld in contact with the platen subassembly 220 for polishing, thevacuum force may be removed. In such an arrangement, the wafer carrier232 may be designed with a friction surface or a carrier pad whichengages the back side of the semiconductor wafer 100. Furthermore, thecarrier pad and downward force F create a frictional force between thewafer carrier 232 and the semiconductor wafer 100 that effectively holdsthe semiconductor wafer 100 against the wafer carrier 232 and causes thesemiconductor wafer 100 to rotate at the same velocity as the wafercarrier 232. Such wafer carriers and carrier pads are of conventionaldesign and are commercially available.

Moreover, the cooling mechanism 233 counteracts heat generated duringthe polishing process in order to maintain the wafer carrier 232 at asubstantially constant temperature. In particular, the cooling mechanismneutralizes the heat generated due to (i) friction and (ii) the chemicalslurry reacting with the front side of the semiconductor wafer 100.

The displacement mechanism 236 moves the wafer carrier 232 and thesemiconductor wafer 100 under a controlled force F across the platensubassembly 220 as indicated by arrows 231 and 239. The semiconductorwafer 100 is moved at an adjustable rate and along a variable polishingpath P. The polishing path P may be linear, sinusoidal, or a variety ofother patterns. The wafer carrier displacement mechanism 236 is alsocapable of moving the semiconductor wafer 100 along a polishing path toa location beyond the edge of the polishing pad 228 so that thesemiconductor wafer 100 "overhangs" the edge. This overhang arrangementpermits the semiconductor wafer 100 to be moved partially on andpartially off the polishing pad 228 to compensate for polishingirregularities caused by a relative velocity differential between thefaster moving outer portions and the slower moving inner portions of theplaten subassembly 220.

The polishing system 210 also includes a reagent supply system 240 and achemical supply system 260. The reagent supply system 240 includes areagent storage 242, a reagent flow control mechanism 244, and a reagentconduit 246. The reagent storage 242 includes one or more containers forstoring reagents. In particular, the reagent storage 242 stores reagentswhich react in the presence of the catalyst material of the polishingendpoint layer 118. Illustratively, the reagent storage 242 may storet-butyl bromide (i.e. (CH₃)₃ CBr) which catalytically reacts with water(i.e. H₂ O) in the presence of silver ions (i.e. Ag⁺), of the polishingendpoint layer 118. The above reaction may be represented by thefollowing chemical equation: ##STR1## The above chemical reaction isdisclosed in more detail in the article Heterogeneous Catalysis inSolution, (Catalysis by Silver Bromide and other Solids of theSolvolysis of t-Butyl Bromide in 80 vol % Ethanol+Water), by Ester F. G.Barbosa, Roger J Mortimer and Michael Spiro, J. Chem. Soc., FaradayTrans. I, 1981, the disclosure of which is hereby incorporated byreference.

However, it should be appreciated that the above reagent and catalystmaterial are merely exemplary and that many other reagents and catalystmaterials may be suitable for use with the polishing system 210. Forexample, t-butyl bromide may be replaced with a hydrocarbon of similarstereochemistry that is similarly halogenated and the silver ions may bereplaced with mercury ions (i.e. Hg²⁺).

The reagent flow control mechanism 244 controls the flow of reagentthrough the reagent conduit 246, and the reagent conduit 246 connectsthe reagent supply system 240 to the extraction conduit 272 of theendpoint detector 270 (discussed below) so that reagent may betransferred from the reagent supply system 240 to the testing area 274of the endpoint detector 270. To this end, the reagent flow controlmechanism 244 and the reagent conduit 246 transfer reagent from thereagent storage 242 to the extraction conduit 272 at a reagent flow rateΦ_(R) such as 0.5 moles a second of reagent (e.g. t-butyl bromide) for1-10 cubic centimeters a second (cc/s) of effluent flowing through theextraction conduit 272.

The slurry supply system 260 includes a slurry storage 262, a slurryflow control mechanism 264, and a slurry conduit 266. The reagentstorage 262 includes one or more containers for storing slurry. In apreferred embodiment, the slurry storage 262 stores a slurry thatincludes alumina (i.e. AlO₃) which is an abrasive material thatfacilitates polishing of the front side of the semiconductor wafer 100and reactants which selectively react to certain materials of the frontside of the semiconductor wafer 100. Chemical slurries having suchproperties are well known and commercially available. Moreover, in thepreferred embodiment the slurry stored in the slurry storage 262 issufficiently acidic to dissolve silver ions of the polishing endpointlayer 118. It should be appreciated that the polishing system 210 may beconstructed without the reagent supply system 240 if the reagents areincluded in the chemical slurry of the slurry supply system 260.

The slurry flow control mechanism 260 controls the flow of slurrythrough the slurry conduit 266, and the slurry conduit 256 transfers theslurry from the slurry storage 262 to the polishing area atop platensubassembly 220. To this end, the slurry flow control mechanism 264 andthe slurry conduit 266 introduce slurry as indicated by arrow 268 atopthe polishing pad 228 at a slurry flow rate Φ_(S).

The polishing system 210 further includes an endpoint detector 270. Theendpoint detector 270 includes an extraction conduit 272, an extractionflow control mechanism 273, a testing area 274, a sensor 276, and awaste conduit 277. The extraction conduit 272 receives effluent from thepolishing area atop platen subassembly 220. The effluent may include thechemical slurry of the slurry supply system 260, and materials removedfrom the semiconductor wafer 100. The extraction flow control mechanism273 controls the flow of effluent from the extraction conduit 272 to thetesting area 274. To this end, the extraction flow control mechanism 273and the extraction conduit 272 introduce effluent to the testing area274 at an extraction rate Φ_(E). Moreover, the extraction flow controlmechanism 273 includes a membrane which filters various unknown solidsfrom the testing area 274. In a preferred embodiment, the membrane ofthe extraction flow control mechanism 273 has a pore size that isslightly larger than the alumina included in the chemical slurry.

The waste conduit 277 of the endpoint detector 270 connects the testingarea 274 to a waste treatment facility (not shown). The waste conduit277 transfers the effluent at a waste flow rate Φ_(W) from the testingarea 274 to a waste treatment facility that treats and properly disposesof the effluent.

The sensor 276 is operable to analyze the effluent present in thetesting area 274 and generate an endpoint detection signal when theeffluent has a particular characteristic that is indicative of thepolishing endpoint being reached. To this end, the sensor 276 isoperable to determine whether the reagents of the reagent supply system240 have reacted or are reacting catalytically. For example, since theabove chemical reaction lowers the pH level of the effluent, the sensor276 in a preferred embodiment includes a digital pH meter that (i)measures the amount of hydrogen ions (i.e. H⁺) present in the effluent,and (ii) generates the endpoint signal in response to the determiningthat the effluent in the testing area has become sufficiently acidic(i.e. the pH level of the effluent has dropped below a predeterminedlevel)

Alternatively, the sensor 276 may be an optical sensor which is operableto detect a color change in the effluent. An indicator such asphenolphthalein may be introduced into the testing area 274 which causesthe effluent to change color when the pH level of the effluent crosses apredetermined pH level. Accordingly, the optical sensor of endpointdetector 270 may monitor the color of the effluent in the testing area274 and generate the endpoint detection signal in response to detectingthat the effluent has changed color.

The polishing system 210 further includes a controller 280 forcontrolling the polishing system 210 in order to effectuate the desiredpolishing results for the semiconductor wafer 100. The controller 280 isoperatively coupled to the components of the polishing system 210 viaconnectors 281-287 in order to monitor and control in real-time thecomponents of the polishing system 210. In particular, the controller280 is configured to control the reagent flow rate Φ_(R), the slurryflow rate Φ_(S), the extraction rate Φ_(E), the polishing path P, thewafer velocity V_(W), and the platen velocity V_(P). The controller 280may be implemented with a microcontroller, an ASIC, discrete circuitcomponents, or any combination of the above. Furthermore, the controller280 may include computational means for calculating specific parametersand memory for storing software routines and parameters.

More specifically, the controller 280 is coupled to the reagent flowcontrol mechanism 244 via a connector 281 to monitor and adjust thereagent flow rate Φ_(R). The controller 280 is coupled to thedisplacement mechanism 236 via connector 282 to monitor and controllablyadjust the polishing path P of the semiconductor wafer 100 and the speedat which the semiconductor wafer 100 is moved across the platensubassembly 220. The controller 280 is coupled to the carrier motor 234via connector 283 to monitor the motor rpm and wafer velocity V_(W)imparted by the wafer carrier 232 and to adjust the speed of the wafercarrier 232 as desired. The controller 280 is coupled to platen motor218 via connector 284 to monitor the motor rpm and platen velocity V_(p)of platen subassembly 220, and to adjust the speed of the platensubassembly 220 as desired. The controller 280 is coupled to theextraction flow control mechanism 273 via a connector 285 to monitor andadjust the flow rate Φ_(E) of the effluent. The controller 280 iscoupled to the sensor 276 of the endpoint detection system 270 via aconnector 286 to monitor the endpoint detection signal generated by theendpoint detection device 270. The controller 280 is coupled to theslurry flow control mechanism 264 via a connector 287 to monitor andadjust the slurry flow rate Φ_(S).

Prior to operating the polishing system 210, a fabrication process formsin the semiconductor wafer 100 a polishing endpoint layer 118 thatincludes catalyst material. In particular, the fabrication process formsthe polishing endpoint layer 118 at a predetermined distance from thesurface of the semiconductor wafer 100, the substrate 102, or anotherlayer of the semiconductor wafer 100. Then, the wafer carrier 232engages the back side of the semiconductor wafer 100 and presses thefront side of the semiconductor wafer 100 against the polishing pad 228with a force F. The controller 280 causes (i) the platen motor 218 torotate the platen subassembly 220 at a platen velocity V_(P) (ii) thecarrier motor 234 to rotate the wafer carrier 232 at a wafer velocity ofV_(W), (iii) the displacement mechanism 236 to execute a polishing pathP, and (iv) the slurry flow control mechanism 264 to apply chemicalslurry to the polishing pad 228 at a slurry flow rate Φ_(S). Theresulting complex movement of the wafer carrier 232 relative to thepolishing pad 228, the force F, and the chemical slurry all cooperate toremove material from the front side of the semiconductor wafer 100.

Once the polishing system 210 is close to the polishing endpoint layer118, the controller 280 causes (i) the reagent flow control mechanism244 to transfer reagent to the extraction conduit 272 at a reagent flowrate Φ_(R), and (ii) the extraction flow control mechanism 273 toextract effluent from the polishing pad 228 at an extraction rate Φ_(E).The endpoint detector 270 then generates an endpoint signal once theendpoint detector 270 detects that the reagent has catalytically reacteddue to the extracted effluent containing the catalyst material of thepolishing endpoint layer 118. In response to the endpoint detector 270generating the endpoint signal, the controller 280 terminates thepolishing of the semiconductor wafer 100 since the semiconductor wafer100 has a planar surface with an even topography when the polishingsystem 210 polishes the semiconductor wafer 100 down to the polishingendpoint layer 118.

FIG. 3 illustrates a polishing procedure 300 utilized by polishingsystem 210. The controller 280 in step 310 of the polishing procedure300 causes the polishing system 210 to begin polishing the front side ofthe semiconductor wafer 100 in order to remove material from the frontside of the semiconductor wafer 100. To this end, the controller 280causes the wafer carrier 232 to rub the front side of the semiconductorwafer 100 against the platen subassembly 220. Moreover, the controller280 causes the chemical slurry supply system 260 to apply chemicalslurry atop platen subassembly in order to facilitate the removal ofmaterial from the front side of the semiconductor wafer 100.

After a predetermined amount of polishing time has elapsed, thecontroller 280 in step 320 causes the reagent supply system 240 totransfer reagent to the extraction conduit 272 of the endpoint detector270. The predetermined amount of polishing time is close to but lessthan the amount of polishing time required for the polishing system 210to reach the polishing endpoint layer 118. Waiting until the polishingsystem 210 is closer to the polishing endpoint layer 118 before applyingthe reagent helps conserve the amount of reagent consumed by thepolishing system 210.

Then, the controller in step 330 causes the extraction flow control 273of the endpoint detector 270 to introduce effluent extracted from theplaten subassembly 220 by the extraction conduit 272 into the testingarea 274. The endpoint detector 270 then analyzes in step 340 theeffluent in order to determine whether the catalyst material of thepolishing endpoint layer 118 has caused the reagent of the reagentsupply system 240 to catalytically react.

Since in the preferred embodiment the reagent (t-butyl bromide)catalytically reacts with water in the presence of the catalyst material(silver ions) to produce hydrogen ions, the sensor 276 of the preferredembodiment in step 350 determines whether the reagent has caused the pHlevel of the effluent to drop below a predetermined level. As discussedabove, the sensor 276 may include a digital pH meter which detects theamount of hydrogen ions present in the effluent. Alternatively, thesensor 276 may include an optical sensor which detects whether a pHindicator such as phenolphthalein has caused the effluent to changecolor. If sensor 276 determines that the reagent has catalyticallyreacted, then the sensor 276 transmits an endpoint signal to thecontroller 280; otherwise, the polishing system 210 returns to step 330to extract more effluent.

In response to receiving the endpoint signal, the controller 280 in step360 causes the polishing system 210 to stop polishing the semiconductorwafer 100. It should be appreciated that the controller 280 may allowthe polishing system 210 to continue polishing the semiconductor wafer100 for a predetermined amount of time in order to further removematerial from the semiconductor wafer 100. This further removal ofmaterial or overpolishing may be desirable after certain steps of afabrication process.

The controller 280 then in step 370 flushes the catalyst material fromthe polishing platen 220 and the endpoint detector 270. In particular,the controller 280 causes the chemical slurry to be applied to thepolishing platen 220 for a predetermined period of time. The continualapplication of the chemical slurry after the polishing system 210 hasstopped polishing the semiconductor wafer 100 helps flush the catalystmaterial of the polishing endpoint layer 118 from the platen subassembly220 and the endpoint detector 270 so that the endpoint detector 270 maydetect the endpoint of the next semiconductor wafer to be polished.

Since in the preferred embodiment, the catalytic reaction detected bythe endpoint detector 270 requires catalyst material and no othermaterials from the polishing endpoint layer 118, a small amount ofmaterial removed from the polishing endpoint layer 118 can trigger asubstantial catalytic reaction. This amplification effect enables theendpoint detector 270 to cost effectively detect presence of a smallamount of polishing endpoint layer material by detecting a substantialcatalytic reaction instead of trying to directly detect material removedfrom the polishing endpoint layer 118.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and description isto be considered as exemplary and not restrictive in character, it beingunderstood that only a preferred embodiment has been shown and describedand that all changes and modifications that come within the spirit ofthe invention are desired to be protected. For example, while thepolishing endpoint layer 118 has been described as being implanted intothe semiconductor water 100, other methods of forming the polishingendpoint layer 118 may also be used. For example, U.S. Pat. No.5,668,063 to Fry et al., the disclosure which is hereby incorporated byreference, discloses forming a tracer layer upon other layers. Thismethod of forming a tracer layer may be suitable for forming thecatalytic polishing endpoint layer 118 used by the polishing system 210of the present invention.

What is claimed is:
 1. A method of planarizing a semiconductor waferhaving a polishing endpoint layer that includes a catalyst material,comprising the steps of:polishing a first side of said wafer in order toremove material from said wafer, said polishing step includes the stepof applying a slurry to said first side of said wafer, said slurryreceiving said material removed from said wafer; advancing a reagentonto said first side of said wafer and into contact with said slurryafter said slurry applying step so as to create an effluent positionedon said first side of said wafer, wherein said reagent catalyticallyreacts when (i) said catalyst material is present within said slurry,and (ii) said reagent contacts said slurry; analyzing said effluentafter said reagent advancing step to detect if a catalytic reaction hasoccurred due to said polishing step removing said catalyst material ofsaid polishing endpoint layer; generating a control signal if occurrenceof said catalytic reaction is detected in said analyzing step; andterminating said polishing step in response to generation of saidcontrol signal.
 2. The method of claim 1, further comprising the stepof:forming said polishing endpoint layer at a distance from a substrateof said wafer.
 3. The method of claim 1, further comprising the stepof:implanting said polishing endpoint layer through said first side ofsaid wafer at a distance from said first side of said wafer.
 4. Themethod of claim 1, wherein:said analyzing step includes the step ofadding an indicator to said effluent which causes said effluent toexhibit a color change in presence of said catalytic reaction.
 5. Themethod of claim 1, wherein:said advancing step includes the step ofadvancing a plurality of reagents into contact with said slurry, andsaid plurality of reagents catalytically react when (i) said catalystmaterial is present within said slurry, and (ii) said plurality ofreagents contact said slurry.
 6. A method of planarizing a semiconductorwafer down to a predetermined distance from a semiconductor substrate ofsaid wafer, comprising the steps of:forming in said wafer a catalystmaterial that is at said distance from said substrate of said wafer;polishing a first side of said wafer in order to remove material fromsaid wafer, said polishing step includes the step of applying a slurryto said first side of said wafer, said slurry receiving said materialremoved from said wafer; advancing a reagent onto said first side ofsaid wafer and into contact with said slurry after said slurry applyingstep so as to create an effluent positioned on said first side of saidwafer, wherein said reagent catalytically reacts when (i) said catalystmaterial is present within said slurry, and (ii) said reagent contactssaid slurry; analyzing said effluent after said reagent advancing stepto detect if a catalytic reaction has occurred due to said polishingstep removing a portion of said catalyst material from said wafer;generating a control signal if occurrence of said catalytic reaction isdetected in said analyzing step; and terminating said polishing step inresponse to generation of said control signal.
 7. The method of claim 6,wherein said forming step comprises the step of:implanting said catalystmaterial through said first side of said wafer in order to form saidcatalyst material in said wafer at said distance from said substrate. 8.The method of claim 6, wherein:said reagent advancing step causes a pHlevel of said slurry to change in presence of said catalytic reaction.9. The method of claim 6, wherein:said advancing step includes the stepof advancing a plurality of reagents into contact with said slurry, andsaid plurality of reagents catalytically react when (i) said catalystmaterial is present within said slurry, and (ii) said plurality ofreagents contact said slurry.